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| PD-94810 IRG4BC30UDPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 * IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations * Industry standard TO-220AB package * Lead-Free C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.95V @VGE = 15V, IC = 12A n-channel Benefits * Generation -4 IGBT's offer highest efficiencies available * IGBTs optimized for specific application conditions * HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing * Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 23 12 92 92 12 92 20 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Units V A V W C Thermal Resistance Parameter RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ------------------------- Typ. ----------0.50 ----2 (0.07) Max. 1.2 2.5 -----80 ------ Units C/W g (oz) www.irf.com 1 11/3/03 IRG4BC30UDPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Collector-to-Emitter Breakdown Voltage V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage V(BR)CES Min. 600 ------------Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage ---Forward Transconductance 3.1 Zero Gate Voltage Collector Current ------Diode Forward Voltage Drop ------Gate-to-Emitter Leakage Current ---Typ. Max. Units ------V 0.63 ---- V/C 1.95 2.1 2.52 ---V 2.09 ------- 6.0 -11 ---- mV/C 8.6 ---S ---- 250 A ---- 2500 1.4 1.7 V 1.3 1.6 ---- 100 nA Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 1.0mA IC = 12A VGE = 15V IC = 23A See Fig. 2, 5 IC = 12A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 250A VCE = 100V, IC = 12A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C IC = 12A See Fig. 13 IC = 12A, TJ = 150C VGE = 20V VGE(th) VGE(th)/TJ gfe ICES V FM IGES Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr Irr Qrr di (rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. ---------------------------------------------------------------------------------- Typ. 50 8.1 18 40 21 91 80 0.38 0.16 0.54 40 22 120 180 0.89 7.5 1100 73 14 42 80 3.5 5.6 80 220 180 120 Max. Units Conditions 75 IC = 12A 12 nC VCC = 400V See Fig. 8 27 VGE = 15V ---TJ = 25C ---ns IC = 12A, VCC = 480V 140 VGE = 15V, RG = 23 130 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 0.9 ---TJ = 150C, See Fig. 9, 10, 11, 18 ---ns IC = 12A, VCC = 480V ---VGE = 15V, RG = 23 ---Energy losses include "tail" and ---mJ diode reverse recovery. ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 --- = 1.0MHz 60 ns TJ = 25C See Fig. 120 TJ = 125C 14 IF = 12A 6.0 A TJ = 25C See Fig. 10 TJ = 125C 15 VR = 200V 180 nC TJ = 25C See Fig. 600 TJ = 125C 16 di/dt 200A/s ---- A/s TJ = 25C See Fig. ---TJ = 125C 17 2 www.irf.com IRG4BC30UDPBF 16 Load Current ( A ) 12 Duty cycle: 50% TJ = 125C T sink = 90C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 21W 60% of rated voltage 8 I 4 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 IC , Collector-to-Emitter Current (A) TJ = 25C TJ = 150C 10 IC , Collector-to-Emitter Current (A) TJ = 150C 10 TJ = 25C 1 1 0.1 0.1 1 VGE = 15V 20s PULSE WIDTH A 10 0.1 5 6 7 8 V CC = 10V 5s PULSE WIDTH A 9 10 11 12 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4BC30UDPBF 3.0 Maximum DC Collector Current (A 25 VCE , Collector-to-Emitter Voltage (V) V GE = 15V V GE = 15V 80s PULSE WIDTH IC = 24A 20 2.5 15 IC = 12A 2.0 10 5 I C = 6.0A A -60 -40 -20 0 20 40 60 80 100 120 140 160 1.5 0 25 50 75 100 125 A 150 TC , Case Temperature (C) TJ , Junction Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 P DM 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) t 1 t2 Notes: 1. Duty factor D = t / t 12 2. Peak TJ = P DM x Z thJC + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC30UDPBF 2000 C, Capacitance (pF) 1600 VGE , Gate-to-Emitter Voltage (V) A V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 VCE = 400V I C = 12A 16 Cies 1200 12 800 Coes Cres 8 400 4 0 1 10 0 0 10 20 30 40 A 50 100 VCE, Collector-to-Emitter Voltage (V) Qg , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.60 10 Total Switchig Losses (mJ) 0.58 Total Switchig Losses (mJ) V CC = 480V V GE = 15V T J = 25C I C = 12A R G = 23 V GE = 15V V CC = 480V I C = 24A 0.56 1 I C = 12A I C = 6.0A 0.54 0.52 0.50 0 10 20 30 40 50 A 60 0.1 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 R G, Gate Resistance ( ) TJ , Junction Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4BC30UDPBF 2.0 Total Switchig Losses (mJ) 1.6 I C , Collector-to-Emitter Current (A) R G = 23 T J = 150C V CC = 480V V GE = 15V 1000 VGE = 20V GE TJ = 125C 100 1.2 SAFE OPERATING AREA 10 0.8 1 0.4 0.0 0 10 20 A 30 0.1 1 10 100 1000 IC , Collector-to-Emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 100 Instantaneous Forward Current - I F (A) TJ = 150C 10 TJ = 125C TJ = 25C 1 0.4 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4BC30UDPBF 160 100 VR = 200V TJ = 125C TJ = 25C 120 VR = 200V TJ = 125C TJ = 25C I F = 24A I F = 12A 80 I IRRM - (A) I F = 24A 10 t rr - (ns) I F = 12A IF = 6.0A I F = 6.0A 40 0 100 di f /dt - (A/s) 1000 1 100 di f /dt - (A/s) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt 600 10000 VR = 200V TJ = 125C TJ = 25C VR = 200V TJ = 125C TJ = 25C 400 di(rec)M/dt - (A/s) 1000 Q RR - (nC) IF = 6.0A I F = 24A 200 I F = 12A I F = 12A 100 IF = 6.0A IF = 24A 0 100 di f /dt - (A/s) 1000 10 100 di f /dt - (A/s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4BC30UDPBF 90% Vge +Vge Same type device as D.U.T. Vce Ic 10% Vce 90% Ic Ic 5% Ic 80% of Vce 430F D.U.T. td(off) tf Eoff = t1+5S Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg Ic trr Qrr = trr id dt tx tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk 10% Irr Vcc Vpk Irr Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t1 t2 DIODE REVERSE RECOVERY ENERGY t3 t4 Erec = Vd id dt t3 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4BC30UDPBF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 18 . 18 ' L 1000V 50V 6000F 100V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25C 19. 20. www.irf.com 9 IRG4BC30UDPBF Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG = 23 (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN LEAD ASSIGNMENTS HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECTOR 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED O N WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIO NAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER Note: "P" in assembly line position indicates "Lead-Free" DATE CODE YEAR 7 = 1997 WEEK 19 LINE C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/03 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ |
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